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COMSOL Inc multiphysics© finite element model
Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL <t>Multiphysics©.</t> Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.
Multiphysics© Finite Element Model, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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multiphysics© finite element model - by Bioz Stars, 2026-10
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1) Product Images from "Critical role of precursor flux in modulating nucleation density in 2D material synthesis revealed by a digital twin † "

Article Title: Critical role of precursor flux in modulating nucleation density in 2D material synthesis revealed by a digital twin †

Journal: Nanoscale Advances

doi: 10.1039/d5na00202h

Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL Multiphysics©. Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.
Figure Legend Snippet: Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL Multiphysics©. Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.

Techniques Used: Labeling, Insulation, Microscopy

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Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL <t>Multiphysics©.</t> Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.
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Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL <t>Multiphysics©.</t> Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.
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Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL <t>Multiphysics©.</t> Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.
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Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL <t>Multiphysics©.</t> Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.
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Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL <t>Multiphysics©.</t> Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.
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Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL <t>Multiphysics©.</t> Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.
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Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL <t>Multiphysics©.</t> Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.
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Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL <t>Multiphysics©.</t> Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.
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Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL Multiphysics©. Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.

Journal: Nanoscale Advances

Article Title: Critical role of precursor flux in modulating nucleation density in 2D material synthesis revealed by a digital twin †

doi: 10.1039/d5na00202h

Figure Lengend Snippet: Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL Multiphysics©. Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.

Article Snippet: We used COMSOL Multiphysics© to develop a coupled 3D model of gas-flow, precursor concentration, and temperature distribution for a realistic simulation of the CVD process.

Techniques: Labeling, Insulation, Microscopy

Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL Multiphysics©. Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.

Journal: Nanoscale Advances

Article Title: Critical role of precursor flux in modulating nucleation density in 2D material synthesis revealed by a digital twin †

doi: 10.1039/d5na00202h

Figure Lengend Snippet: Schematic of the CVD setup and growth of monolayer MoS 2 . (a) Schematic of the 3-zone furnace and experimental setup used for atmospheric pressure CVD (AP-CVD) of monolayer MoS 2 . (b) Schematic of the reactor geometry setup in COMSOL Multiphysics©. Heating zones are labeled as I, II and III, separated by insulation zones. Boundary conditions at reactor ends are indicated. S and MoO 3 powder precursors are placed in zones I and II, while the substrate is placed vertically in zone III. Carrier gas is introduced from the left and the reactor is in an ambient environment at t = 0. Schematics of slotted and non-slotted substrate configurations are shown in the lower panel. Optical microscopy images of CVD grown triangular monolayer MoS 2 on SiO 2 /Si for (c) slotted and (d) non-slotted configurations.

Article Snippet: We create a COMSOL Multiphysics© finite element model by accounting for fluid flow dynamics, evaporation of chalcogen and metal oxide precursors, realistic substrate geometries, and temperature profiles.

Techniques: Labeling, Insulation, Microscopy