model-based library method (MBL Life science)
90
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MBL Life science
model-based library method
Model Based Library Method, supplied by MBL Life science, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/model+based+methods/model+based+library+method/us10290464-7-14-16
Average 90 stars, based on 1 article reviews
Model Based Library Method, supplied by MBL Life science, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/model+based+methods/model+based+library+method/us10290464-7-14-16
Average 90 stars, based on 1 article reviews
model-based library method - by Bioz Stars,
2026-09
90/100 stars
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Electron Microscopy:Article Title: Charged particle beam device and pattern measurement device Article Snippet: As a method of estimating a cross-sectional shape using the SEM, there is a Article Title: Conventional vs . model-based measurement of patterned line widths from scanning electron microscopy profiles Article Snippet: Feature widths were determined either by the conventional threshold method or by the Article Title: Accurate measurement of very small line patterns in critical dimension scanning electron microscopy using model-based library matching technique Article Snippet: Chie Shishido Maki Tanaka Mayuka Osaki Hitachi Ltd. Production Engineering Research Laboratory 292 Yoshida-cho, Totsuka-ku Yokohama, Kanagawa 244–0817, Japan E-mail: chie.shishido.gd@hitachi.com Abstract.. Our purpose is to reduce the critical dimension (CD) bias for very small patterns with line widths of <15 nm.. The model-based library (MBL) method, which estimates the dimensions and shape of a target pattern by comparing a measured scanning electron microscopy image waveform with a library of simulated waveforms, was modified in two ways. Article Title: Proceedings of modern microscopy/scanning 2003, May 3-5, 2003, San Diego, California, USA Article Snippet: 25, 2 (2003) FIG. 2 Linewidths and sidewall angles for the bright profile were determined using the Article Title: Pattern shape evaluation method, semiconductor device manufacturing method, and pattern shape evaluation device Article Snippet: There is a Modification:Article Title: Charged particle beam device and pattern measurement device Article Snippet: As a method of estimating a cross-sectional shape using the SEM, there is a Article Title: Conventional vs . model-based measurement of patterned line widths from scanning electron microscopy profiles Article Snippet: Feature widths were determined either by the conventional threshold method or by the Article Title: Accurate measurement of very small line patterns in critical dimension scanning electron microscopy using model-based library matching technique Article Snippet: Chie Shishido Maki Tanaka Mayuka Osaki Hitachi Ltd. Production Engineering Research Laboratory 292 Yoshida-cho, Totsuka-ku Yokohama, Kanagawa 244–0817, Japan E-mail: chie.shishido.gd@hitachi.com Abstract.. Our purpose is to reduce the critical dimension (CD) bias for very small patterns with line widths of <15 nm.. The model-based library (MBL) method, which estimates the dimensions and shape of a target pattern by comparing a measured scanning electron microscopy image waveform with a library of simulated waveforms, was modified in two ways. Article Title: Proceedings of modern microscopy/scanning 2003, May 3-5, 2003, San Diego, California, USA Article Snippet: 25, 2 (2003) FIG. 2 Linewidths and sidewall angles for the bright profile were determined using the Article Title: Pattern shape evaluation method, semiconductor device manufacturing method, and pattern shape evaluation device Article Snippet: There is a Microscopy:Article Title: Charged particle beam device and pattern measurement device Article Snippet: As a method of estimating a cross-sectional shape using the SEM, there is a Article Title: Conventional vs . model-based measurement of patterned line widths from scanning electron microscopy profiles Article Snippet: Feature widths were determined either by the conventional threshold method or by the Article Title: Accurate measurement of very small line patterns in critical dimension scanning electron microscopy using model-based library matching technique Article Snippet: Chie Shishido Maki Tanaka Mayuka Osaki Hitachi Ltd. Production Engineering Research Laboratory 292 Yoshida-cho, Totsuka-ku Yokohama, Kanagawa 244–0817, Japan E-mail: chie.shishido.gd@hitachi.com Abstract.. Our purpose is to reduce the critical dimension (CD) bias for very small patterns with line widths of <15 nm.. The model-based library (MBL) method, which estimates the dimensions and shape of a target pattern by comparing a measured scanning electron microscopy image waveform with a library of simulated waveforms, was modified in two ways. Article Title: Proceedings of modern microscopy/scanning 2003, May 3-5, 2003, San Diego, California, USA Article Snippet: 25, 2 (2003) FIG. 2 Linewidths and sidewall angles for the bright profile were determined using the Article Title: Pattern shape evaluation method, semiconductor device manufacturing method, and pattern shape evaluation device Article Snippet: There is a |
