finite element method simulator (ANSYS inc)
90
Structured Review
ANSYS inc
finite element method simulator
Finite Element Method Simulator, supplied by ANSYS inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/finite-element+method+analysis+simulation/finite+element+method+simulator/us12215439-184-7-10
Average 90 stars, based on 1 article reviews
Finite Element Method Simulator, supplied by ANSYS inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/finite-element+method+analysis+simulation/finite+element+method+simulator/us12215439-184-7-10
Average 90 stars, based on 1 article reviews
finite element method simulator - by Bioz Stars,
2026-09
90/100 stars
Images
Related Articles
other:Article Title: SiC epitaxial wafer Article Snippet: The simulation was performed using the finite Article Title: Improving the etching performance of high-aspect-ratio contacts by wafer temperature control Article Snippet: A novel wafer temperature control system using direct expansion cycles is developed to improve etching performance.. This system enables rapid temperature control of a wafer with low power consumption.. In a previous report, we confirmed that the etching rate and mask selectivity of high-aspect-ratio contact etching could be increased by around 6% and 14%, respectively, by controlling the temperature of the wafer during the etching process. Article Title: The Sixth International Workshop on Chemical Science and Pharmaceutical Research (CSPR2019), Seoul, Republic of Korea, 22nd - 25th October 2019. Article Snippet: The results of the selected optimum coil were compared using the finite Article Title: SiC substrate and sic epitaxial wafer Article Snippet: It was separately confirmed that the simulation using the finite Article Title: SiC substrate and sic epitaxial wafer Article Snippet: The simulation was performed using a Article Title: Damped Aero-Acoustic Microphone With Improved High-Frequency Characteristics Article Snippet: With the mechanical resonance damped using a perforated back-plate underneath the sensing diaphragm, a piezoresistive aero-acoustic microphone with improved high-frequency characteristics is demonstrated.. The sensing diaphragm and the damper back-plate were monolithically integrated in one process flow.. The microphone was calibrated using a high-voltage electrical spark-discharge acoustic N-wave source. Article Title: SiC epitaxial wafer Article Snippet: It was separately confirmed that the simulation using the finite |