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tucker davis technology electrostatic speaker coupler model  (Tucker-Davis Tech)

 
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    Tucker-Davis Tech tucker davis technology electrostatic speaker coupler model
    Tucker Davis Technology Electrostatic Speaker Coupler Model, supplied by Tucker-Davis Tech, used in various techniques. Bioz Stars score: 86/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/electrostatic+model/davis+iii+iii+system+tdt+technology+tucker/pmc12923069-72-0-0
    Average 86 stars, based on 1 article reviews
    tucker davis technology electrostatic speaker coupler model - by Bioz Stars, 2026-09
    86/100 stars

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    Article Title: Differences in auditory brainstem responses between laboratory-reared and wild-caught prairie voles ( Microtus ochrogaster )
    Article Snippet: Tucker-Davis Technology Electrostatic Speaker-Coupler Model (TDT MF-1; for frequency 1−24 kHz) and Tucker-Davis Technology Electrostatic Speakers (TDT EC-1; for frequency 32 and 46 kHz) were placed in the left and right ear canals for close-field recording.

    Article Title: Calcium blockers protect against sensory epithelial damage and hearing loss in Cx26-cKO mice.
    Article Snippet: Up to 1024 responses were averaged for each stimulus and recorded using the Tucker-Davis Technology System (RZ6, Tucker Davis Technologies, Alachua, FL, USA).

    Software:

    Article Title: Epac1 Alleviates Senescence in Auditory Hair Cells via the Ferroptosis
    Article Snippet: .. Tucker‐Davis Technology System hardware and software were used for ABR tests (New York, USA). ..

    Article Title: Disassociating cerebral vasomotion from low frequency spontaneous neurovascular coupling.
    Article Snippet: The probes were coupled to a pre-amplifier which was in turn connected to a data acquisition unit via fibre optic cable (Medusa Bioamp, Tucker Davis Technologies (TDT), Florida). .. Stimulus-evoked and spontaneously occurring neural recordings were sampled at 24.41 kHz with a 16-bit resolution, with the data collected using openEX software (Tucker Davis Technologies, Florida) which also handled trigger timings and data storage. ..

    Article Title: Cell Type–Specific Encoding of Cocaine‐Conditioned Responses in the Lateral Preoptic Area
    Article Snippet: .. During the CPP pretest and posttest (Figure ), fibre photometry data were collected using Tucker‐Davis Technologies hardware and software that was interfaced with AnyMaze to track chamber position. ..

    Article Title: High-fidelity neural speech reconstruction through an efficient acoustic-linguistic dual-pathway framework
    Article Snippet: .. Data recording was performed through Tucker-Davis Technology (TDT) OpenEx software. ..

    Article Title: Disassociating cerebral vasomotion from low frequency spontaneous neurovascular coupling
    Article Snippet: The probes were coupled to a pre-amplifier which was in turn connected to a data acquisition unit via fibre optic cable (Medusa Bioamp, Tucker Davis Technologies (TDT), Florida). .. Stimulus-evoked and spontaneously occurring neural recordings were sampled at 24.41 kHz with a 16-bit resolution, with the data collected using openEX software (Tucker Davis Technologies, Florida) which also handled trigger timings and data storage. ..



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    Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the <t>electrostatic</t> strength of SL potential.
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    Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

    Journal: ACS Nano

    Article Title: Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices

    doi: 10.1021/acsnano.4c14500

    Figure Lengend Snippet: Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

    Article Snippet: We performed numerical calculations in COMSOL using electrostatic models to illustrate how the permittivity of the nanopatterned dielectric affects the U SL strength in graphene at a fixed V SL .

    Techniques: