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COMSOL Inc electrostatic models
Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the <t>electrostatic</t> strength of SL potential.
Electrostatic Models, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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electrostatic models - by Bioz Stars, 2026-09
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1) Product Images from "Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices"

Article Title: Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices

Journal: ACS Nano

doi: 10.1021/acsnano.4c14500

Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.
Figure Legend Snippet: Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

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Related Articles

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Article Title: Quantum control of exciton wave functions in 2D semiconductors
Article Snippet: The electrostatic simulation is done with COMSOL multiphysics electrostatic modeling on a 3D grid using finite element method.

Article Title: Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices
Article Snippet: We performed numerical calculations in COMSOL using electrostatic models to illustrate how the permittivity of the nanopatterned dielectric affects the U SL strength in graphene at a fixed V SL .

Article Title: Multiformity of extracellular microelectrode recordings from Aδ neurons in the dorsal root ganglia: a computational modeling study.
Article Snippet: For each individual FEM simulation, we set all inactive electrodes as equipotential with no net current across their surface, and we set the outer boundaries of the general thorax domain to ground.We applied a load boundary condition of 1 A to the active recording electrode, and we solved the electrostaticmodel in COMSOL using the conjugate gradientmethod to solve Laplace’s equation: r r rUð Þ 1⁄4 0 ð1Þ where r is a matrix of the different tissue conductivities and U is the resulting potential field.

Article Title: System and method for model-predictive-control-based micro-assembly control with the aid of a digital computer
Article Snippet: The COMSOL electrostatic model used the following parameters 19: the diameter of the chiplets 11, the electrode 12 dimensions, the dielectric fluid constant (ε=2) and the positions and material of the sphere and electrode.

Article Title: Ultrafast Binder-Free Corona Discharge-Enabled Automated Electrostatic Patterning (AEP) Technique.
Article Snippet: Get e-Alerts SURFACES, INTERFACES, AND APPLICATIONS | April 1, 2025 Ultrafast Binder-Free Corona Discharge-Enabled Automated Electrostatic Patterning (AEP) Technique , , , , , , , , and ACS Applied Materials & Interfaces Cite this: ACS Appl.. Mater.. Interfaces 2025, 17, 15, 23249–23262 https://doi.org/10.1021/acsami.4c22698 Copyright © 2025 American Chemical Society Request reuse permissions Cite Share Jump to Zijian Weng Marcelo Farfan Evan Williams Parinitha Giridharan Logan G Schmid David Murphy Long Wang Wenbin Mao* Ying Zhong* Open PDF Supporting Information (7) Article Views 200 Altmetric Citations Learn about these metrics Published April 1, 2025 5/29/25, 7:49 PM Ultrafast Binder-Free Corona Discharge-Enabled Automated Electrostatic Patterning (AEP) Technique | ACS Applied Materials & Interfaces https://pubs.acs.org/doi/10.1021/acsami.4c22698 2/32 Patterning techniques have garnered extensive attention within the realm of printed electronics owing to their substantial contributions across multifarious applications.

Article Title: Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices.
Article Snippet: We performed numerical calculations in COMSOL using electrostatic models to illustrate how the permittivity of the nanopatterned dielectric affects the USL strength in graphene at a fixed VSL.

Derivative Assay:

Article Title: Analysis of Collapse–Snapback Phenomena in Capacitive Micromachined Ultrasound Transducers
Article Snippet: .. The current, I t [A], from which I r m s is derived, is obtained by taking the time derivative of the charge Q t [C], as this quantity is not directly provided by the electrostatics model in COMSOL, while θ [rad] is calculated as the phase difference between the zero crossings of the current and voltage after subtracting the DC voltage offset. ..

Article Title: Analysis of Collapse-Snapback Phenomena in Capacitive Micromachined Ultrasound Transducers.
Article Snippet: .. The current, I(t) [A], from which Irms is derived, is obtained by taking the time derivative of the charge Q(t) [C], as this quantity is not directly provided by the electrostatics model in COMSOL, while θ [rad] is calculated as the phase difference between the zero crossings of the current and voltage after subtracting the DC voltage offset. ..



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COMSOL Inc electrostatic models
Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the <t>electrostatic</t> strength of SL potential.
Electrostatic Models, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/electrostatic+model/electrostatic+model/pmc11924326-48-7-5
Average 90 stars, based on 1 article reviews
electrostatic models - by Bioz Stars, 2026-09
90/100 stars
  Buy from Supplier

Image Search Results


Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

Journal: ACS Nano

Article Title: Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices

doi: 10.1021/acsnano.4c14500

Figure Lengend Snippet: Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

Article Snippet: We performed numerical calculations in COMSOL using electrostatic models to illustrate how the permittivity of the nanopatterned dielectric affects the U SL strength in graphene at a fixed V SL .

Techniques: