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ac/dc electrostatics 3d model  (COMSOL Inc)

 
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    COMSOL Inc ac/dc electrostatics 3d model
    Ac/Dc Electrostatics 3d Model, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/electrostatic+model/ac+dc+electrostatics+3d+model/pm40167244-276-15-14
    Average 90 stars, based on 1 article reviews
    ac/dc electrostatics 3d model - by Bioz Stars, 2026-11
    90/100 stars

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    Article Title: Ultrafast Binder-Free Corona Discharge-Enabled Automated Electrostatic Patterning (AEP) Technique.
    Article Snippet: Get e-Alerts SURFACES, INTERFACES, AND APPLICATIONS | April 1, 2025 Ultrafast Binder-Free Corona Discharge-Enabled Automated Electrostatic Patterning (AEP) Technique , , , , , , , , and ACS Applied Materials & Interfaces Cite this: ACS Appl.. Mater.. Interfaces 2025, 17, 15, 23249–23262 https://doi.org/10.1021/acsami.4c22698 Copyright © 2025 American Chemical Society Request reuse permissions Cite Share Jump to Zijian Weng Marcelo Farfan Evan Williams Parinitha Giridharan Logan G Schmid David Murphy Long Wang Wenbin Mao* Ying Zhong* Open PDF Supporting Information (7) Article Views 200 Altmetric Citations Learn about these metrics Published April 1, 2025 5/29/25, 7:49 PM Ultrafast Binder-Free Corona Discharge-Enabled Automated Electrostatic Patterning (AEP) Technique | ACS Applied Materials & Interfaces https://pubs.acs.org/doi/10.1021/acsami.4c22698 2/32 Patterning techniques have garnered extensive attention within the realm of printed electronics owing to their substantial contributions across multifarious applications.



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    electrostatic models  (COMSOL Inc)
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    Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the <t>electrostatic</t> strength of SL potential.
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    Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

    Journal: ACS Nano

    Article Title: Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices

    doi: 10.1021/acsnano.4c14500

    Figure Lengend Snippet: Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

    Article Snippet: We performed numerical calculations in COMSOL using electrostatic models to illustrate how the permittivity of the nanopatterned dielectric affects the U SL strength in graphene at a fixed V SL .

    Techniques: