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3d electrostatic model  (COMSOL Inc)

 
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    COMSOL Inc 3d electrostatic model
    3d Electrostatic Model, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/electrostatic+model/3d+electrostatic+model/pm35969812-102-4-0
    Average 90 stars, based on 1 article reviews
    3d electrostatic model - by Bioz Stars, 2026-11
    90/100 stars

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    other:

    Article Title: Interlayer Exciton Diode and Transistor.
    Article Snippet: COMSOL simulations used a 3D electrostatic model using known values for the in-plane and out-of-plane dielectric constants of the hBN and TMD layers, and hBN thicknesses that matched the AFM data of the individual 2D layers.

    Article Title: Study on non-bioparticles and Staphylococcus aureus by dielectrophoresis
    Article Snippet: Here, a 3D AC/DC electrostatic model of a non-uniform electric eld in aqueous solution was performed for analysis of electric eld distribution and prediction of trapping location of different particles by nite element multiphysics soware COMSOL Multiphysics 4.2a (Burlington, MA, USA).

    Article Title: Limits on Spin-Dependent WIMP-Nucleon Cross Section Obtained from the Complete LUX Exposure
    Article Snippet: Furthermore, 83mKr data were used to tune a 3-D electrostatic model of the detector, built with the comsol Multiphysics package [9].

    Article Title: Study on non-bioparticles and Staphylococcus aureus by dielectrophoresis
    Article Snippet: Here, a 3D AC/DC electrostatic model of a non-uniform electric field in aqueous solution was performed for analysis of electric field distribution and prediction of trapping location of different particles by finite element multiphysics software COMSOL Multiphysics 4.2a (Burlington, MA, USA).

    Article Title: New local electrical diagnostic tool for dielectric barrier discharge (DBD).
    Article Snippet: A new diagnostic tool to study dielectric barrier discharges (DBDs) at atmospheric pressure by local electrical measurements is introduced.. The square ground electrode is divided into 64 square segments (3.44 mm side length) so as to measure the discharge currents and gas voltages with spatial resolutions, which allows a 2D mapping.. The electrical measurement results are validated by a comparison with short exposure time photographs taken from the top view of the discharge cell.

    Clinical Proteomics:

    Article Title: A novel and efficient multi-jet plasma polishing process for optical fabrication
    Article Snippet: There is an increasing demand for higher precision, larger sizes, and greater machining efficiency for freeform optical elements due to the rapid development of advanced optics.. Plasma processing technology has gained significant attention due to its capability for damage-free and high-precision optical fabrication; however, achieving high processing efficiency for mediumto larger-aperture optical elements remains a challenge.. This paper proposes a novel multi-jet polishing process based on the atmospheric pressure plasma jet (APPJ), capable of high-efficiency deterministic optical polishing.

    Control:

    Article Title: 1D and 3D co-simulation and self-adaptive position control of electrostatic levitation in China’s Space Station
    Article Snippet: .. The co-simulation proposed here is the implementation of 1D control system modeling in Simulink and the 3D electrostatic modeling in COMSOL Multiphysics version 5.6, as illustrated in Fig. . .. The method uses the Simulink system model as the simulation master, while the 3D model is used as a sub-model with more detailed physical information of electric field and electrostatic force, which is represented by a Functional Mock-up Unit (FMU).



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    electrostatic models  (COMSOL Inc)
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    Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the <t>electrostatic</t> strength of SL potential.
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    Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

    Journal: ACS Nano

    Article Title: Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices

    doi: 10.1021/acsnano.4c14500

    Figure Lengend Snippet: Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

    Article Snippet: We performed numerical calculations in COMSOL using electrostatic models to illustrate how the permittivity of the nanopatterned dielectric affects the U SL strength in graphene at a fixed V SL .

    Techniques: