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electron backscatter diffraction (ebsd) detector tsl  (TexSEM Laboratories)

 
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    TexSEM Laboratories electron backscatter diffraction (ebsd) detector tsl
    Electron <t>backscatter</t> <t>diffraction</t> <t>(EBSD)</t> mapping of pillars built with pulse energy of 161 mJ, laser pulse duration of 1 ms, stage speed 0.0167 mm/s, frequency of 200 Hz and powder feed rate of 1.0 g/min on a Si <111> wafer shown in dark blue color ( a ) and on a <100> substrate shown in red color ( b ) A higher powder feed rate (15 g/min) with otherwise identical conditions resulted in polycrystalline growth ( c ). The inverse pole figure (IPF) color scale shows the crystal orientations in the pillar growth direction . The corresponding SEM pictures ( d – f ), including the marked grain boundaries, reveal some deposition defects, post-deposition sample preparation cracks and polishing scratches.
    Electron Backscatter Diffraction (Ebsd) Detector Tsl, supplied by TexSEM Laboratories, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/electron+backscattered+diffraction+analysis/electron+backscatter+diffraction/pmc07660219-70-19-25
    Average 90 stars, based on 1 article reviews
    electron backscatter diffraction (ebsd) detector tsl - by Bioz Stars, 2026-09
    90/100 stars

    Images

    1) Product Images from "Epitaxial Growth of Silicon on Silicon Wafers by Direct Laser Melting"

    Article Title: Epitaxial Growth of Silicon on Silicon Wafers by Direct Laser Melting

    Journal: Materials

    doi: 10.3390/ma13214728

    Electron backscatter diffraction (EBSD) mapping of pillars built with pulse energy of 161 mJ, laser pulse duration of 1 ms, stage speed 0.0167 mm/s, frequency of 200 Hz and powder feed rate of 1.0 g/min on a Si <111> wafer shown in dark blue color ( a ) and on a <100> substrate shown in red color ( b ) A higher powder feed rate (15 g/min) with otherwise identical conditions resulted in polycrystalline growth ( c ). The inverse pole figure (IPF) color scale shows the crystal orientations in the pillar growth direction . The corresponding SEM pictures ( d – f ), including the marked grain boundaries, reveal some deposition defects, post-deposition sample preparation cracks and polishing scratches.
    Figure Legend Snippet: Electron backscatter diffraction (EBSD) mapping of pillars built with pulse energy of 161 mJ, laser pulse duration of 1 ms, stage speed 0.0167 mm/s, frequency of 200 Hz and powder feed rate of 1.0 g/min on a Si <111> wafer shown in dark blue color ( a ) and on a <100> substrate shown in red color ( b ) A higher powder feed rate (15 g/min) with otherwise identical conditions resulted in polycrystalline growth ( c ). The inverse pole figure (IPF) color scale shows the crystal orientations in the pillar growth direction . The corresponding SEM pictures ( d – f ), including the marked grain boundaries, reveal some deposition defects, post-deposition sample preparation cracks and polishing scratches.

    Techniques Used: Sample Prep

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    EBSD analysis of the T6-treated AC alloy: ( a ) grain orientation and size distribution of α-Al grains; ( b ) corresponding PFs; ( c ) GB analysis; ( d ) RF analysis.

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    Article Title: Evolution of the Young’s Modulus of Al-7Si-4Cu Alloy with Increasing Temperature by Various Strengthening Approaches

    doi: 10.3390/ma19091831

    Figure Lengend Snippet: EBSD analysis of the T6-treated AC alloy: ( a ) grain orientation and size distribution of α-Al grains; ( b ) corresponding PFs; ( c ) GB analysis; ( d ) RF analysis.

    Article Snippet: Electron backscatter diffraction (EBSD) analysis was performed using a JEOL JSM-7800F SEM (Japan Electron Optics Laboratory Co., Ltd., Tokyo, Japan) to characterize the grain size, crystallographic orientation, grain boundary (GB) distribution, and recrystallized fraction (RF).

    Techniques:

    EBSD analysis of the T6-treated AE alloy: ( a ) grain orientation and size distribution of α-Al grains; ( b ) corresponding PFs; ( c ) GB analysis; ( d ) RF analysis.

    Journal: Materials

    Article Title: Evolution of the Young’s Modulus of Al-7Si-4Cu Alloy with Increasing Temperature by Various Strengthening Approaches

    doi: 10.3390/ma19091831

    Figure Lengend Snippet: EBSD analysis of the T6-treated AE alloy: ( a ) grain orientation and size distribution of α-Al grains; ( b ) corresponding PFs; ( c ) GB analysis; ( d ) RF analysis.

    Article Snippet: Electron backscatter diffraction (EBSD) analysis was performed using a JEOL JSM-7800F SEM (Japan Electron Optics Laboratory Co., Ltd., Tokyo, Japan) to characterize the grain size, crystallographic orientation, grain boundary (GB) distribution, and recrystallized fraction (RF).

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