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electron backscatter diffraction (ebsd) detector tsl  (TexSEM Laboratories)

 
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    TexSEM Laboratories electron backscatter diffraction (ebsd) detector tsl
    Electron <t>backscatter</t> <t>diffraction</t> <t>(EBSD)</t> mapping of pillars built with pulse energy of 161 mJ, laser pulse duration of 1 ms, stage speed 0.0167 mm/s, frequency of 200 Hz and powder feed rate of 1.0 g/min on a Si <111> wafer shown in dark blue color ( a ) and on a <100> substrate shown in red color ( b ) A higher powder feed rate (15 g/min) with otherwise identical conditions resulted in polycrystalline growth ( c ). The inverse pole figure (IPF) color scale shows the crystal orientations in the pillar growth direction . The corresponding SEM pictures ( d – f ), including the marked grain boundaries, reveal some deposition defects, post-deposition sample preparation cracks and polishing scratches.
    Electron Backscatter Diffraction (Ebsd) Detector Tsl, supplied by TexSEM Laboratories, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/electron+backscatter+diffraction/pmc07660219-70-19-25?v=TexSEM+Laboratories
    Average 90 stars, based on 1 article reviews
    electron backscatter diffraction (ebsd) detector tsl - by Bioz Stars, 2026-08
    90/100 stars

    Images

    1) Product Images from "Epitaxial Growth of Silicon on Silicon Wafers by Direct Laser Melting"

    Article Title: Epitaxial Growth of Silicon on Silicon Wafers by Direct Laser Melting

    Journal: Materials

    doi: 10.3390/ma13214728

    Electron backscatter diffraction (EBSD) mapping of pillars built with pulse energy of 161 mJ, laser pulse duration of 1 ms, stage speed 0.0167 mm/s, frequency of 200 Hz and powder feed rate of 1.0 g/min on a Si <111> wafer shown in dark blue color ( a ) and on a <100> substrate shown in red color ( b ) A higher powder feed rate (15 g/min) with otherwise identical conditions resulted in polycrystalline growth ( c ). The inverse pole figure (IPF) color scale shows the crystal orientations in the pillar growth direction . The corresponding SEM pictures ( d – f ), including the marked grain boundaries, reveal some deposition defects, post-deposition sample preparation cracks and polishing scratches.
    Figure Legend Snippet: Electron backscatter diffraction (EBSD) mapping of pillars built with pulse energy of 161 mJ, laser pulse duration of 1 ms, stage speed 0.0167 mm/s, frequency of 200 Hz and powder feed rate of 1.0 g/min on a Si <111> wafer shown in dark blue color ( a ) and on a <100> substrate shown in red color ( b ) A higher powder feed rate (15 g/min) with otherwise identical conditions resulted in polycrystalline growth ( c ). The inverse pole figure (IPF) color scale shows the crystal orientations in the pillar growth direction . The corresponding SEM pictures ( d – f ), including the marked grain boundaries, reveal some deposition defects, post-deposition sample preparation cracks and polishing scratches.

    Techniques Used: Sample Prep



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    EBSD analysis of the T6-treated AC alloy: ( a ) grain orientation and size distribution of α-Al grains; ( b ) corresponding PFs; ( c ) GB analysis; ( d ) RF analysis.

    Journal: Materials

    Article Title: Evolution of the Young’s Modulus of Al-7Si-4Cu Alloy with Increasing Temperature by Various Strengthening Approaches

    doi: 10.3390/ma19091831

    Figure Lengend Snippet: EBSD analysis of the T6-treated AC alloy: ( a ) grain orientation and size distribution of α-Al grains; ( b ) corresponding PFs; ( c ) GB analysis; ( d ) RF analysis.

    Article Snippet: Electron backscatter diffraction (EBSD) analysis was performed using a JEOL JSM-7800F SEM (Japan Electron Optics Laboratory Co., Ltd., Tokyo, Japan) to characterize the grain size, crystallographic orientation, grain boundary (GB) distribution, and recrystallized fraction (RF).

    Techniques:

    EBSD analysis of the T6-treated AE alloy: ( a ) grain orientation and size distribution of α-Al grains; ( b ) corresponding PFs; ( c ) GB analysis; ( d ) RF analysis.

    Journal: Materials

    Article Title: Evolution of the Young’s Modulus of Al-7Si-4Cu Alloy with Increasing Temperature by Various Strengthening Approaches

    doi: 10.3390/ma19091831

    Figure Lengend Snippet: EBSD analysis of the T6-treated AE alloy: ( a ) grain orientation and size distribution of α-Al grains; ( b ) corresponding PFs; ( c ) GB analysis; ( d ) RF analysis.

    Article Snippet: Electron backscatter diffraction (EBSD) analysis was performed using a JEOL JSM-7800F SEM (Japan Electron Optics Laboratory Co., Ltd., Tokyo, Japan) to characterize the grain size, crystallographic orientation, grain boundary (GB) distribution, and recrystallized fraction (RF).

    Techniques:

    EBSD microstructures of Cr-Ni-Mo-V steel at different tempering temperatures: ( a ) 425 °C; ( b ) 475 °C; ( c ) 525 °C; ( d ) 575 °C; ( e ) 625 °C; ( f ) proportion of HAGBs.

    Journal: Materials

    Article Title: Effect of Tempering Temperature on Microstructural Evolution and Mechanical Properties of Cr-Ni-Mo-V Steel for Pressure Vessel Applications

    doi: 10.3390/ma19091679

    Figure Lengend Snippet: EBSD microstructures of Cr-Ni-Mo-V steel at different tempering temperatures: ( a ) 425 °C; ( b ) 475 °C; ( c ) 525 °C; ( d ) 575 °C; ( e ) 625 °C; ( f ) proportion of HAGBs.

    Article Snippet: For orientation and grain boundary analysis, specimens were electropolished in a 5% perchloric acid–ethanol solution at 15 V for 50 s. The crystal orientation and grain boundary distribution of the experimental steel were analyzed by means of an electron backscatter diffraction (EBSD) detector (EDAX Velocity Super) (EDAX LLC, Mahwah, NJ, USA), and the data acquisition step was 0.2 μm.

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