Journal: Mrs Communications

Article Title: Progress of emerging non-volatile memory technologies in industry

doi: 10.1557/s43579-024-00660-2

Figure Lengend Snippet: Summary of top metrics from the detailed company information in the text.

Article Snippet: At VLSI 2024, Sony researchers presented an HZO FRAM SRAM macro, again in collaboration with NaMLab, and with the Fraunhofer IPMS.

Techniques:

Journal: Mrs Communications

Article Title: Progress of emerging non-volatile memory technologies in industry

doi: 10.1557/s43579-024-00660-2

Figure Lengend Snippet: World Intellectual Property Organisation Patentscope search results from 2015 to July 2024 for the four included eNVM. The number of IP applications has been steadily increasing over the years. In line with Fig. , RRAM and MRAM are the frontrunner technologies, but the others are not far behind. Patentscope search settings were office = all, languages = en, stemming = FALSE, single family = FALSE, and including NPL = FALSE. Search terms for the individual eNVM technologies were as follows: ALLTXT:(“phase change random access memory”) or (“phase change RAM”), ALLTXT:(“ferroelectric RAM”) or (“ferroelectric random access memory”), ALLTXT:(“resistive random access memory”) or (“resistive RAM”), and ALLTXT:(“magnetoresistive RAM”) or (“magnetic RAM”) or (“magnetoresistive random access memory”) or (“magnetic random access memory”).

Article Snippet: At VLSI 2024, Sony researchers presented an HZO FRAM SRAM macro, again in collaboration with NaMLab, and with the Fraunhofer IPMS.

Techniques:

Journal: Mrs Communications

Article Title: Progress of emerging non-volatile memory technologies in industry

doi: 10.1557/s43579-024-00660-2

Figure Lengend Snippet: World Intellectual Property Organisation Patentscope search results from 2015 to July 2024 for the four included eNVM. The number of IP applications has been steadily increasing over the years. In line with Fig. , RRAM and MRAM are the frontrunner technologies, but the others are not far behind. Patentscope search settings were office = all, languages = en, stemming = FALSE, single family = FALSE, and including NPL = FALSE. Search terms for the individual eNVM technologies were as follows: ALLTXT:(“phase change random access memory”) or (“phase change RAM”), ALLTXT:(“ferroelectric RAM”) or (“ferroelectric random access memory”), ALLTXT:(“resistive random access memory”) or (“resistive RAM”), and ALLTXT:(“magnetoresistive RAM”) or (“magnetic RAM”) or (“magnetoresistive random access memory”) or (“magnetic random access memory”).

Article Snippet: Based on the documentation on their homepage (datasheets in 2024 still with Cypress logo), the FRAM technology is strongly based on technology developed by Cypress Semiconductor Corporation, which Infineon acquired in 2020.

Techniques:

Journal: Mrs Communications

Article Title: Progress of emerging non-volatile memory technologies in industry

doi: 10.1557/s43579-024-00660-2

Figure Lengend Snippet: Timeline of recent technology demonstrations of eNVM with respective CMOS nodes. Sources for the different demonstrations can be found in the company details sections. Note that we only included companies with confirmed and active consumer products (notably, Intel/Micron 3D XPoint is not included, as it was discontinued), but for those, we included both products and research papers. *For Fujitsu, information about CMOS node integration could not be found. 2022 was one of their larger RRAM product launches, another was at least as early as 2016. For FRAM, 2022 was a major release, but their FRAM mass production started already in 1999. The top right inset clarifies companies where the name is not evident from the logo.

Article Snippet: [ ] Texas Instruments —According to the application notes and FAQs on their homepage, Texas Instruments have been using lead zirconate titanate (PZT) FRAM in their microcontrollers for more than 10 years.

Techniques:

Journal: Mrs Communications

Article Title: Progress of emerging non-volatile memory technologies in industry

doi: 10.1557/s43579-024-00660-2

Figure Lengend Snippet: Schematic illustrations of the working principles of (a) FRAM, (b) PCRAM, (c) filamentary RRAM, (d) area-dependent RRAM, and (e) MRAM. Grey indicates electrodes and pale yellow indicates the memory material. For each, the top schematic represents the high resistance state, and the bottom represents the low-resistance state. The arrows in (a) indicate the ferroelectric polarisation orientation. The dots in (b) indicate the amorphous and crystalline phase of the material. The gradient in (d) indicates the height and width of a Schottky barrier. The arrows in (e) indicate the spin orientation and FL and RL stand for free layer and reference layer, respectively.

Article Snippet: [ ] Texas Instruments —According to the application notes and FAQs on their homepage, Texas Instruments have been using lead zirconate titanate (PZT) FRAM in their microcontrollers for more than 10 years.

Techniques:

Journal: Mrs Communications

Article Title: Progress of emerging non-volatile memory technologies in industry

doi: 10.1557/s43579-024-00660-2

Figure Lengend Snippet: High-level summary of advantages and disadvantages typically propagated in eNVM reviews, such as Ref. 1 .

Article Snippet: [ ] Texas Instruments —According to the application notes and FAQs on their homepage, Texas Instruments have been using lead zirconate titanate (PZT) FRAM in their microcontrollers for more than 10 years.

Techniques:

Journal: Mrs Communications

Article Title: Progress of emerging non-volatile memory technologies in industry

doi: 10.1557/s43579-024-00660-2

Figure Lengend Snippet: Summary of top metrics from the detailed company information in the text.

Article Snippet: [ ] Texas Instruments —According to the application notes and FAQs on their homepage, Texas Instruments have been using lead zirconate titanate (PZT) FRAM in their microcontrollers for more than 10 years.

Techniques:

Journal: Mrs Communications

Article Title: Progress of emerging non-volatile memory technologies in industry

doi: 10.1557/s43579-024-00660-2

Figure Lengend Snippet: World Intellectual Property Organisation Patentscope search results from 2015 to July 2024 for the four included eNVM. The number of IP applications has been steadily increasing over the years. In line with Fig. , RRAM and MRAM are the frontrunner technologies, but the others are not far behind. Patentscope search settings were office = all, languages = en, stemming = FALSE, single family = FALSE, and including NPL = FALSE. Search terms for the individual eNVM technologies were as follows: ALLTXT:(“phase change random access memory”) or (“phase change RAM”), ALLTXT:(“ferroelectric RAM”) or (“ferroelectric random access memory”), ALLTXT:(“resistive random access memory”) or (“resistive RAM”), and ALLTXT:(“magnetoresistive RAM”) or (“magnetic RAM”) or (“magnetoresistive random access memory”) or (“magnetic random access memory”).

Article Snippet: [ ] Texas Instruments —According to the application notes and FAQs on their homepage, Texas Instruments have been using lead zirconate titanate (PZT) FRAM in their microcontrollers for more than 10 years.

Techniques: