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HRXRD spectra result on the four-period stacked SiGe/Si multilayer epitaxial grown on Si substrate.

Journal: Nanomaterials

Article Title: Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics

doi: 10.3390/nano11071689

Figure Lengend Snippet: HRXRD spectra result on the four-period stacked SiGe/Si multilayer epitaxial grown on Si substrate.

Article Snippet: Subsequently, EDX (FEI Talos, Brno, Czech Republic) line scan analysis of Ge and Si elements is also performed to determine the interfacial morphologies, and atomic fraction of the SiGe/Si layers for the four-period stacked SiGe/Si multilayer.

Techniques:

( a )Cross-section HAADF-STEM images of four-period stacked SiGe/Si multilayer; ( b ) its magnified images at the SiGe/Si interfaces.

Journal: Nanomaterials

Article Title: Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics

doi: 10.3390/nano11071689

Figure Lengend Snippet: ( a )Cross-section HAADF-STEM images of four-period stacked SiGe/Si multilayer; ( b ) its magnified images at the SiGe/Si interfaces.

Article Snippet: Subsequently, EDX (FEI Talos, Brno, Czech Republic) line scan analysis of Ge and Si elements is also performed to determine the interfacial morphologies, and atomic fraction of the SiGe/Si layers for the four-period stacked SiGe/Si multilayer.

Techniques:

EDX line scan analysis of Ge and Si elements across the four-period stacked SiGe/Si multilayer.

Journal: Nanomaterials

Article Title: Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics

doi: 10.3390/nano11071689

Figure Lengend Snippet: EDX line scan analysis of Ge and Si elements across the four-period stacked SiGe/Si multilayer.

Article Snippet: Subsequently, EDX (FEI Talos, Brno, Czech Republic) line scan analysis of Ge and Si elements is also performed to determine the interfacial morphologies, and atomic fraction of the SiGe/Si layers for the four-period stacked SiGe/Si multilayer.

Techniques: