apsys model (Crosslight Software Inc)
90
Structured Review
Crosslight Software Inc
apsys model
Apsys Model, supplied by Crosslight Software Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/software+program/apsys+simulation+program/10__1364_slash_oe__25__009556-266-9-20
Average 90 stars, based on 1 article reviews
Apsys Model, supplied by Crosslight Software Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/software+program/apsys+simulation+program/10__1364_slash_oe__25__009556-266-9-20
Average 90 stars, based on 1 article reviews
apsys model - by Bioz Stars,
2026-10
90/100 stars
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Software:Article Title: Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors Article Snippet: The native doping type and carriers’ concentration for the ALD deposited AlN has been characterized by the Hall effect using a Hall Effect Measurement Systems (HMS-7000, Ecopia) at room temperature. .. The electric field distribution for the GS and GIS device structures under dark condition was simulated using a commercial Article Title: Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer Article Snippet: .. In order to better understand the influence of the graded indium composition p-InGaN conduction layer on the performance of GaN-based green LEDs, we performed a numerical simulation using Article Title: Efficiency improvement of AlGaN-based deep ultraviolet LEDs with gradual Al-composition AlGaN conduction layer Article Snippet: * This work has been supported by the Key Research and Development Program of Shandong Province (Nos.2018GGX101027, 2017GGX201002 and 2016GGX4101), the Union Funds of Guizhou Science and Technology Department and Guizhou Minzu University China (No.LH20157221), the Yantai “13th Five-Year” Marine Economic Innovation and Development Demonstration City Project (No.YHCXZB-L-201703), and the Fundamental Research Funds of Shandong University in China (Nos.2018WLJH87, 2018JCG01 and 2017TB0021).. ** E-mail: xums@sdu.edu.cn HUANG Ping-yang (黄平洋), XIAO Long-fei (肖龙飞), CHEN Xiu-fang (陈秀芳), WANG Qing-pu (王卿 璞), XU Ming-sheng (徐明升)**, XU Xian-gang (徐现刚) , and HUANG Jing (黄静) 1.. Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China 2. Article Title: Gate drivers and voltage regulators for gallium nitride devices and integrated circuits Article Snippet: .. A simulation was performed using Article Title: High-side gate driver for gallium nitride integrated circuits Article Snippet: .. A simulation was performed using Article Title: Thermal lensing effects on lateral leakage in GaN-based vertical-cavity surface-emitting laser cavities Article Snippet: .. The electrical model is a modification of the fairly Diffusion-based Assay:Article Title: Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors Article Snippet: The native doping type and carriers’ concentration for the ALD deposited AlN has been characterized by the Hall effect using a Hall Effect Measurement Systems (HMS-7000, Ecopia) at room temperature. .. The electric field distribution for the GS and GIS device structures under dark condition was simulated using a commercial Control:Article Title: Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors Article Snippet: The native doping type and carriers’ concentration for the ALD deposited AlN has been characterized by the Hall effect using a Hall Effect Measurement Systems (HMS-7000, Ecopia) at room temperature. .. The electric field distribution for the GS and GIS device structures under dark condition was simulated using a commercial other:Article Title: Theoretical analysis of the response time of MWIR InAs/InAsSb T2SL barrier detector Article Snippet: The spectral response (SR) and dark current density–voltage (J–V) characteristics of the detector were measured at temperatures of 230 and 300 K. Next, to more precisely determine the parameters of the tested structure, numerical modeling was carried out using the commercial Article Title: High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy Article Snippet: We carried out a simulation based on the Schrödinger and Poisson equations using an Modification:Article Title: Thermal lensing effects on lateral leakage in GaN-based vertical-cavity surface-emitting laser cavities Article Snippet: .. The electrical model is a modification of the fairly |