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non-electrostatic surface complexation model  (Lawrence Livermore National Security LLC)

 
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    Lawrence Livermore National Security LLC non-electrostatic surface complexation model
    Non Electrostatic Surface Complexation Model, supplied by Lawrence Livermore National Security LLC, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/product/electrostatic+model/non+electrostatic+surface+complexation+model/pm27935282-296-8-19
    Average 90 stars, based on 1 article reviews
    non-electrostatic surface complexation model - by Bioz Stars, 2026-09
    90/100 stars

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    other:

    Article Title: Effect of Natural Organic Matter on Plutonium Sorption to Goethite.
    Article Snippet: B.; Zavarin, M.; Zhao, P. Development of a Composite Non-Electrostatic Surface Complexation Model Describing Plutonium Sorption to Aluminosilicates; LLNL-TR-408276; Lawrence Livermore Natl.

    Article Title: Observed changes in the mechanism and rates of Pu(V) reduction on hematite as a function of total plutonium concentration.
    Article Snippet: Changes in aqueousand solid-phase plutonium oxidation states were monitored as a function of time and plutonium concentration in hematite (α-Fe2O3) suspensions containing initially Pu(V).. Batch kinetic experiments were conducted at plutonium concentrations between 10−8 and 10−6 M at pH 5 and 0.3 g/L (9.3 m/L) hematite.. Surface-mediated reduction of Pu(V) was observed under all conditions studied.

    Article Title: Np(V) and Pu(v) ion exchange and surface-mediated reduction mechanisms on montmorillonite.
    Article Snippet: Due to their ubiquity and chemical reactivity, aluminosilicate clays play an important role in actinide retardation and colloidfacilitated transport in the environment.. In this work, Pu(V) and Np(V) sorption to Na-montmorillonite was examined as a function of ionic strength, pH, and time.. Np(V) sorption equilibrium was reached within 2 h. Sorption was relatively weak and showed a pH and ionic strength dependence.



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    Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the <t>electrostatic</t> strength of SL potential.
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    Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

    Journal: ACS Nano

    Article Title: Synthetic Band Structure Engineering of Graphene Using Block Copolymer-Templated Dielectric Superlattices

    doi: 10.1021/acsnano.4c14500

    Figure Lengend Snippet: Effect of high- k nanopatterns on SL potential. Schematic illustrations of the fabrication process showing (a) the BGB stack transferred onto (b) the remote SL substrate consisting of high- k nanopatterns. (c) Band diagram along the z -axis showing the electronic system in the nonpatterned regions of the remote substrate under a positive V SL . V ox = e·n SL,ox / C ox from eq . (d) Band diagram of graphene along x -axis, illustrating an induced difference in the charge neutrality point (CNP) position due to local variations of the dielectric constant in the neighboring hole and solid regions of the high- k nanopattern. (e) A model of the electric displacement, D , under graphene for a remote substrate with AlO x nanopatterns ( k = 8) at V SL = 50 V. The spatial variations of the field lines represent the local variations of the capacitance. (f) Modeled Δ n SL under V SL = 50 V corresponding to SiO 2 , AlO x , and HfO x nanopatterned dielectrics. The data illustrate the beneficial effect of employing high- k nanopatterns in enhancing the electrostatic strength of SL potential.

    Article Snippet: We performed numerical calculations in COMSOL using electrostatic models to illustrate how the permittivity of the nanopatterned dielectric affects the U SL strength in graphene at a fixed V SL .

    Techniques: