Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: Vertical GaN power devices include ( a ) GaN power rectifier, ( b ) GaN CAVET, ( c ) GaN planar MOSFET, and ( d ) GaN Trench MOSFET.

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques:

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: The comparison of PFOM for various vertical GaN MOSFET with a breakdown voltage of 1 kV and above [ , , , , , ].

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques: Comparison

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: ( a ) Fin structure vertical GaN MOSFET and ( b ) in situ oxide–GaN interlayer FET (OG_FET).

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques: In Situ

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: GaN MOSFET with double field plate Reprinted with permission from Ref. . 2017, Dong Ji.

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques:

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: GaN MOSFET with field-limiting rings (FLRs). Reprinted with permission from Ref. . 2022, Kachi Tetsu and Narita Tetsuo.

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques:

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: Mesa edge termination of GaN MOSFET. Reprinted with permission from Ref. . 2019, Srabanti Chowdhury.

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques:

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: The schematic comparison of GaN vertical MOSFET with a breakdown voltage greater than 1 kV. Reprinted with permission from Refs. [ , , , , , ].

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques: Comparison

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: The comparison of various vertical GaN transistors with a breakdown voltage greater than 1 kV.

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques: Comparison

Journal: Micromachines

Article Title: Vertical GaN MOSFET Power Devices

doi: 10.3390/mi14101937

Figure Lengend Snippet: Benchmarking vertical GaN devices against lateral GaN MOSFET devices and vertical SiC devices. Adapted from Refs. [ , , , , , , , , , , , , , , , , , , , , , , , , , , ].

Article Snippet: In 2007, ROHM Co. Ltd. (Kyoto, Japan) achieved a significant milestone by reporting the first-ever GaN trench MOSFET [ ].

Techniques:

Journal: Micromachines

Article Title: Switching and Frequency Response Assessment of Photovoltaic Drivers and Their Potential for Different Applications

doi: 10.3390/mi15070832

Figure Lengend Snippet: The structure of the VOM1271 Photovoltaic Driver (PVD) showing the primary side with the LED and the secondary photovoltaic output.

Article Snippet: Therefore, in this study, we have chosen VOM1271 from Vishay [ ] as the device under test for characterization.

Techniques:

Journal: Micromachines

Article Title: Switching and Frequency Response Assessment of Photovoltaic Drivers and Their Potential for Different Applications

doi: 10.3390/mi15070832

Figure Lengend Snippet: Examples of PVDs.

Article Snippet: Therefore, in this study, we have chosen VOM1271 from Vishay [ ] as the device under test for characterization.

Techniques:

Journal: Micromachines

Article Title: Switching and Frequency Response Assessment of Photovoltaic Drivers and Their Potential for Different Applications

doi: 10.3390/mi15070832

Figure Lengend Snippet: Experimental IV ( a ) and PV ( b ) curves of the VOM1271 PVD at input currents I F of 30 mA and 40 mA.

Article Snippet: Therefore, in this study, we have chosen VOM1271 from Vishay [ ] as the device under test for characterization.

Techniques: