electron backscatter diffraction Search Results


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Electron Backscatter Diffraction (Ebsd) Detector Tsl, supplied by TexSEM Laboratories, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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Electron <t>backscatter</t> <t>diffraction</t> <t>(EBSD)</t> mapping of pillars built with pulse energy of 161 mJ, laser pulse duration of 1 ms, stage speed 0.0167 mm/s, frequency of 200 Hz and powder feed rate of 1.0 g/min on a Si <111> wafer shown in dark blue color ( a ) and on a <100> substrate shown in red color ( b ) A higher powder feed rate (15 g/min) with otherwise identical conditions resulted in polycrystalline growth ( c ). The inverse pole figure (IPF) color scale shows the crystal orientations in the pillar growth direction . The corresponding SEM pictures ( d – f ), including the marked grain boundaries, reveal some deposition defects, post-deposition sample preparation cracks and polishing scratches.
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Electron <t>backscatter</t> <t>diffraction</t> <t>(EBSD)</t> mapping of pillars built with pulse energy of 161 mJ, laser pulse duration of 1 ms, stage speed 0.0167 mm/s, frequency of 200 Hz and powder feed rate of 1.0 g/min on a Si <111> wafer shown in dark blue color ( a ) and on a <100> substrate shown in red color ( b ) A higher powder feed rate (15 g/min) with otherwise identical conditions resulted in polycrystalline growth ( c ). The inverse pole figure (IPF) color scale shows the crystal orientations in the pillar growth direction . The corresponding SEM pictures ( d – f ), including the marked grain boundaries, reveal some deposition defects, post-deposition sample preparation cracks and polishing scratches.
Electron Backscatter Diffraction Hikari Super, supplied by Hikari Sales USA, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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Electron <t>backscatter</t> <t>diffraction</t> <t>(EBSD)</t> mapping of pillars built with pulse energy of 161 mJ, laser pulse duration of 1 ms, stage speed 0.0167 mm/s, frequency of 200 Hz and powder feed rate of 1.0 g/min on a Si <111> wafer shown in dark blue color ( a ) and on a <100> substrate shown in red color ( b ) A higher powder feed rate (15 g/min) with otherwise identical conditions resulted in polycrystalline growth ( c ). The inverse pole figure (IPF) color scale shows the crystal orientations in the pillar growth direction . The corresponding SEM pictures ( d – f ), including the marked grain boundaries, reveal some deposition defects, post-deposition sample preparation cracks and polishing scratches.
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TexSEM Laboratories electron backscatter diffraction system oim system
Electron <t>backscatter</t> <t>diffraction</t> <t>(EBSD)</t> mapping of pillars built with pulse energy of 161 mJ, laser pulse duration of 1 ms, stage speed 0.0167 mm/s, frequency of 200 Hz and powder feed rate of 1.0 g/min on a Si <111> wafer shown in dark blue color ( a ) and on a <100> substrate shown in red color ( b ) A higher powder feed rate (15 g/min) with otherwise identical conditions resulted in polycrystalline growth ( c ). The inverse pole figure (IPF) color scale shows the crystal orientations in the pillar growth direction . The corresponding SEM pictures ( d – f ), including the marked grain boundaries, reveal some deposition defects, post-deposition sample preparation cracks and polishing scratches.
Electron Backscatter Diffraction System Oim System, supplied by TexSEM Laboratories, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
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Image Search Results


Electron backscatter diffraction (EBSD) mapping of pillars built with pulse energy of 161 mJ, laser pulse duration of 1 ms, stage speed 0.0167 mm/s, frequency of 200 Hz and powder feed rate of 1.0 g/min on a Si <111> wafer shown in dark blue color ( a ) and on a <100> substrate shown in red color ( b ) A higher powder feed rate (15 g/min) with otherwise identical conditions resulted in polycrystalline growth ( c ). The inverse pole figure (IPF) color scale shows the crystal orientations in the pillar growth direction . The corresponding SEM pictures ( d – f ), including the marked grain boundaries, reveal some deposition defects, post-deposition sample preparation cracks and polishing scratches.

Journal: Materials

Article Title: Epitaxial Growth of Silicon on Silicon Wafers by Direct Laser Melting

doi: 10.3390/ma13214728

Figure Lengend Snippet: Electron backscatter diffraction (EBSD) mapping of pillars built with pulse energy of 161 mJ, laser pulse duration of 1 ms, stage speed 0.0167 mm/s, frequency of 200 Hz and powder feed rate of 1.0 g/min on a Si <111> wafer shown in dark blue color ( a ) and on a <100> substrate shown in red color ( b ) A higher powder feed rate (15 g/min) with otherwise identical conditions resulted in polycrystalline growth ( c ). The inverse pole figure (IPF) color scale shows the crystal orientations in the pillar growth direction . The corresponding SEM pictures ( d – f ), including the marked grain boundaries, reveal some deposition defects, post-deposition sample preparation cracks and polishing scratches.

Article Snippet: Characterization of the crystalline orientation of the grown material with respect to the wafer was then implemented by an electron backscatter diffraction (EBSD) detector (TSL, TexSEM Laboratories, Inc., Provo, UT, USA) mounted in a scanning electron microscope (SEM) chamber (DSM 962, Zeiss, Munich, Germany).

Techniques: Sample Prep